06XSD200 Datasheet, PDF (11/60 Pages) Freescale Semiconductor, Inc – Dual 6.0 mOhm High Side Switch

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V  V_PWR  36 V, 3.0 V  V_DD  5.5 V, - 40 C  T_A  125 C, GND = 0 V. Typical values are
average values evaluated under nominal conditions T_A = 25 °C, V_PWR = 28 V & V_DD = 5.0 V, unless specified otherwise.
parameter
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)
E_SR0 Output Current Sensing Error (%, after offset compensation⁽¹⁷⁾) at _{ESR0_ERR(Comp)}
output Current level (Sense ratio C_SR0 selected):
T_J=-40 C
9.0 A
-10
–
4.5 A
-10
–
2.25 A
-10
–
1.13 A
T_J=125C
-10
–
9.0 A
4.5 A
2.25 A
1.13 A
T_J=25 to 125C
-9.0
–
-8.0
–
-9.0
–
-9.0
–
9.0 A
4.5 A
2.25 A
1.13 A
-9.0
–
-8.0
–
-9.0
–
-9.0
–
E_SR1 Output Current Sensing Error (%, uncompensated ⁽¹⁸⁾) at output
Current level (Sense ratio C_SR1 selected):
E_{SR1_ERR}
T_J=-40 C
2.25 A
-16
–
T_J=125C
2.25 A
-12
–
T_J=25 to 125C
2.25 A
-12
–
%
10
10
10
10
9.0
8.0
9.0
9.0
9.0
8.0
9.0
9.0
%
16
12
12
Notes:
17. See note ⁽¹⁶⁾, but with I_{CSNS_MEAS} obtained after compensation of I_{_LOAD_ERR_RAND} (see Activation and Use of Offset Compensation).
Further accuracy improvements can be obtained by performing a 1 or 2 point calibration
18. E_{SRx_ERR}=(I_{CSNS_MEAS} / I_{CSNS_MODEL}) -1, with I_{CSNS_MODEL} = (I(HS[x])+ I_{_LOAD_ERR_SYS}) * C_{SRx ,} (I_{_LOAD_ERR_SYS} defined above, see
section Current Sense Error Model). With this model, load current becomes: I(HS[x]) ₌ I_CSNS / C_SRx - I_{_LOAD_ERR_SYS}
Analog Integrated Circuit Device Data
Freescale Semiconductor
06XSD200
11