MRF1570NT1_08 Datasheet, PDF (10/23 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

V_GG
GND
C10
B1
C13 C12 C11
C2
C1
C3
C19 C18 C17
B2
C16
C9
C8
R1
R2
C14
C4
C6
R3
R4
C7
C5
C15
C33
C20C22 L3
C24
C21 C23 L4 _C25
C38
MRF1570T1
C29
B3
B4
V_DD
GND
C30 C31 C32
L1
C26
C28
C27
L2
C35 C36 C37
B5
B6
C34
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Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 450 - 520 MHz
100
0
80
470 MHz
60
450 MHz
500 MHz
40
520 MHz
20
V_DD = 12.5 Vdc
0
0
1
2
3
4
5
6
7
8
P_in, INPUT POWER (WATTS)
Figure 23. Output Power versus Input Power
−5
−10
470 MHz
−15 ^{500 MHz}
450 MHz
520 MHz
−20
V_DD = 12.5 Vdc
−25
0 10 20 30 40 50 60 70 80 90
P_out, OUTPUT POWER (WATTS)
Figure 24. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1
10
RF Device Data
Freescale Semiconductor