MWIC930NR1 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MWIC930N wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband On - Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
• Typical Performance @ P1dB: V_DD = 26 Volts, I_DQ1 = 90 mA, I_DQ2 =
240 mA, P_out = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 45%
Driver Application
• Typical Single - Carrier N - CDMA Performance: V_DD = 27 Volts, I_DQ1 =
90 mA, I_DQ2 = 240 mA, P_out = 5 Watts Avg., Full Frequency Band
(865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 52 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application ⁽¹⁾
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V_RD2
V_RG2
V_DS1
RF_in
V_RD1
V_RG1
V_DS2/RF_out
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
Figure 1. Functional Block Diagram
Document Number: MWIC930N
Rev. 6, 5/2006
MWIC930NR1
MWIC930GNR1
746 - 960 MHz, 30 W, 26 - 28 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MWIC930NR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MWIC930GNR1
GND
1
V_RD2
2
V_RG2
3
V_DS1
4
V_RD1
5
RF_in
6
V_RG1
7
V_GS1
8
V_GS2
9
NC 10
GND ₁₁
16 GND
15 NC
14
RF_out/
V_DS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MWIC930NR1 MWIC930GNR1
1