MW7IC930NR1 Datasheet, PDF (1/22 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
Document Number: MW7IC930N
Rev. 0, 8/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC930N wideband integrated circuit is designed with on - chip
matching that makes it usable from 728 to 960 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation.
Driver Application — 900 MHz
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ1 =
106 mA, I_DQ2 = 285 mA, P_out = 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency ⁽¹⁾
G_ps
(dB)
PAE
(%)
ACPR
(dBc)
MW7IC930NR1
MW7IC930GNR1
MW7IC930NBR1
728 - 768 MHz, 920 - 960 MHz,
3.2 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
36.6
16.1
- 48.0
940 MHz
36.8
16.7
- 48.7
960 MHz
36.6
17.3
- 48.6
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out)
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 30 Watts
CW P_out.
• Typical P_out @ 1 dB Compression Point ] 31 Watts CW, I_DQ1 = 40 mA,
I_DQ2 = 340 mA
Driver Application — 700 MHz
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ1 =
106 mA, I_DQ2 = 285 mA, P_out = 3.2 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC930NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC930GNR1
Frequency
728 MHz
748 MHz
768 MHz
G_ps
(dB)
36.4
36.4
36.4
PAE
(%)
16.1
16.1
16.0
ACPR
(dBc)
- 47.7
- 47.8
- 47.9
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC930NBR1
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function ⁽²⁾
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
GND
1
NC
2
NC
3
V_DS1
4
GND
5
16 GND
15 _NC
V_DS1
RF_in
6
14
RF_out/V_DS2
GND
7
RF_in
RF_out/V_DS2
V_GS1
8
V_GS2
9
NC 10
13 NC
GND 11
12 _GND
V_GS1
Quiescent Current
V_GS2
Temperature Compensation ⁽²⁾
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
1