MW7IC3825NR1_10 Datasheet, PDF (1/23 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
Document Number: MW7IC3825N
Rev. 1, 11/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on--chip
matching that makes it usable from 3400 -- 3600 MHz. This multi -- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
PTy_o^p_ut^{ic=al5WWiMatAtsXAPvegr.,fofr=m3a6n0ce0:MVHDD}z,=O2F8DVMol8ts0,2I.^D1^Q6¹d,=6143Q0 AmMA,³/I_4D,^Q4²
= 230 mA,
Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 25 dB
Power Added Efficiency — 15%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --48 dBc in 1 MHz Channel Bandwidth
Driver Applications
• Typical WiMAX Performance: V_DD = 28 Volts, I_DQ1 = 190 mA, I_DQ2 = 230 mA,
P_out = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM ³/₄,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 23.5 dB
Power Added Efficiency — 3.5%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --55 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW
Output Power
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 0 to 44 dBm CW P_out
• Typical P_out @ 1 dB Compression Point ≃ 30 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• On--Chip Matching (50 Ohm Input, RF Choke to Ground)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function ⁽¹⁾
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V_DS1
MW7IC3825NR1
MW7IC3825GNR1
MW7IC3825NBR1
3400--3600 MHz, 5 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886--01
TO--270 WB--16
PLASTIC
MW7IC3825NR1
CASE 1887--01
TO--270 WB--16 GULL
PLASTIC
MW7IC3825GNR1
CASE 1329--09
TO--272 WB--16
PLASTIC
MW7IC3825NBR1
GND
1
V_DS1
2
V_GS2
3
V_GS1
4
NC
5
16 GND
15 _NC
RF_in
V_GS1
Quiescent Current
V_GS2
Temperature Compensation ⁽¹⁾
RF_out/V_DS2
RF_in
6
NC
7
V_GS1
8
V_GS2
9
V_DS1
10
GND 11
14
RF_out/V_DS2
13 NC
12 _GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
1