MW7IC2750GNR1 Datasheet, PDF (1/25 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
Document Number: MW7IC2750N
Rev. 1, 10/2008
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2750N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2300 - 2700 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulations.
• Typical WiMAX Performance: V_DD = 28 Volts, I_DQ1 = 160 mA, I_DQ2 = 550 mA,
P_out = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM ³/₄, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 49 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 50 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 80 W CW
P_out
• Typical P_out @ 1 dB Compression Point ] 50 Watts CW
Driver Applications
•
TPy_op_utic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVH_{DDz,=O2F8DVMol8ts0,2I.D1Q61d,=6146Q0 AmMA,3/I4D,Q42}
= 550 mA,
Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 57 dBc in 1 MHz Channel Bandwidth
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function ⁽¹⁾
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V_DS1
RF_in
RF_out/V_DS2
V_GS1
Quiescent Current
V_GS2
Temperature Compensation ⁽¹⁾
Figure 1. Functional Block Diagram
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
2500- 2700 MHz, 8 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 02
TO - 270 WB - 14
PLASTIC
MW7IC2750NR1
CASE 1621 - 02
TO - 270 WB - 14 GULL
PLASTIC
MW7IC2750GNR1
CASE 1617 - 02
TO - 272 WB - 14
PLASTIC
MW7IC2750NBR1
V_DS1 1
V_GS2 2
V_GS1 3
NC 4
NC 5
RF_in 6
RF_in 7
NC 8
NC 9
V_GS1 10
V_GS2 11
V_DS1 12
14
RF_out /V_DS2
13
RF_out /V_DS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
1