MW6S010NR1 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance at 960 MHz: V_DD = 28 Volts, I_DQ =
125 mA, P_out = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010N
Rev. 3, 5/2006
MW6S010NR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MW6S010NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
T_stg
T_J
Symbol
- 65 to +175
200
Value ^(1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
R_θJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
1