MW6S004NT1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance @ 1960 MHz, 28 Volts, I_DQ = 50 mA,
P_out = 4 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — - 34 dBc
• Typical Two - Tone Performance @ 900 MHz, 28 Volts, I_DQ = 50 mA,
P_out = 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — - 39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MW6S004N
Rev. 1, 4/2006
MW6S004NT1
1 - 2000 MHz, 4 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
V_DSS
V_GS
T_stg
T_J
- 0.5, +68
- 0.5, +12
- 65 to +150
150
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two - Tone
Case Temperature 79°C, 4 W CW
R_θJC
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S004NT1
1