MW6IC2420NBR1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF LDMOS Integrated Power Amplifier

Freescale Semiconductor
Technical Data
RF LDMOS Integrated
Power Amplifier
The MW6IC2420NB integrated circuit is designed with on - chip matching
that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
Driver Applications
• Typical CW Performance at 2450 MHz: V_DD = 28 Volts, I_DQ1 = 210 mA,
I_DQ2 = 370 mA, P_out = 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW
P_out.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2420N
Rev. 0, 3/2007
MW6IC2420NBR1
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
V_DS1
GND 1
V_DS1
2
NC 3
NC 4
16 GND
15 _NC
NC 5
RF_in
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
V_DS1
RF_out/V_DS2
RF_in
6
NC ⁷
V_GS1
8
V_GS2
9
V_DS1
10
GND 11
14
RF_out /
V_DS2
13 NC
12 _GND
(Top View)
Figure 1. Functional Block Diagram
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2420NBR1
1