MW6IC2240N Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on -chip
matching that makes it usable from 2110 to 2170 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical 2 -Carrier W -CDMA Performance: V_DD = 28 Volts, I_DQ1 =
210 mA, I_DQ2 = 370 mA, P_out = 4.5 Watts Avg., Full Frequency Band
(2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB
@ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth
Driver Application
• Typical 2 -Carrier W -CDMA Performance: V_DD = 28 Volts, I_DQ1 =
300 mA, I_DQ2 = 320 mA, P_out = 25 dBm, Full Frequency Band (2110 -
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 29 dB
IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
P_out.
• Characterized with Series Equivalent Large -Signal Impedance Parameters
and Common Source Scattering Parameters
• On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead -Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2240N
Rev. 1, 1/2006
MW6IC2240NBR1
MW6IC2240GNBR1
2110 -2170 MHz, 4.5 W AVG., 28 V
2 x W -CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW6IC2240NBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW6IC2240GNBR1
V_DS1
GND 1
V_DS1
2
NC 3
NC 4
16 GND
15 _NC
NC 5
RF_in
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
V_DS1
RF_out/V_DS2
RF_in
6
NC ⁷
V_GS1
8
V_GS2
9
V_DS1 ¹⁰
GND 11
14
RF_out /
V_DS2
13 NC
12 GND
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2240NBR1 MW6IC2240GNBR1
1