MW6IC2015NBR1 Datasheet, PDF (1/28 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband on - chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA, W - CDMA and TD - SCDMA.
Final Application
• Typical Two - Tone Performance: V_DD = 26 Volts, I_DQ1 = 100 mA, I_DQ2 =
170 mA, P_out = 15 Watts PEP, Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain — 26 dB
Power Added Efficiency — 28%
IMD — - 30 dBc
Driver Application
• Typical GSM EDGE Performance: V_DD = 26 Volts, I_DQ1 = 130 mA, I_DQ2 =
170 mA, P_out = 3 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 69 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 0.8% rms
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
P_out.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V_DS1
RF_in
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
RF_out/V_DS2
Figure 1. Functional Block Diagram
Document Number: MW6IC2015N
Rev. 2, 2/2007
MW6IC2015NBR1
MW6IC2015GNBR1
1805 - 1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW6IC2015NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW6IC2015GNBR1
GND 1
V_DS1
2
NC 3
NC 4
NC 5
RF_in
6
NC ⁷
V_GS1
8
V_GS2
9
NC ¹⁰
GND 11
16 GND
15 _NC
14
RF_out /
V_DS2
13 NC
12 _GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
1