MW6IC1940GNBR1 Datasheet, PDF (1/17 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor
Technical Data
Document Number: MW6IC1940N--1
Rev. 3.1, 12/2009
RF LDMOS Wideband Integrated
Power Amplifier
The MW6IC1940GNB wideband integrated circuit is designed with on--chip
matching that makes it usable from 1920 to 2000 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
MW6IC1940GNBR1
Final Application
• Typical 2--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ1 = 200 mA,
I_DQ2 = 440 mA, P_out = 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 13.5%
IM3 @ 10 MHz Offset — --43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --46 dBc in 3.84 MHz Bandwidth
1920--2000 MHz, 40 W, 28 V
2 x W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Driver Applications
• Typical 2--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ1 = 200 mA,
I_DQ2 = 350 mA, P_out = 26 dBm, Full Frequency Band (1920--2000 MHz),
Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 27 dB
IM3 @ 10 MHz Offset — --59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --62 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW
P_out.
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function ⁽¹⁾
• Integrated ESD Protection
• 225°C Capable Plastic Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1329A--04
TO--272 WB--16 GULL
PLASTIC
GND 1
V_DS1
2
NC 3
16 GND
15 _NC
V_DS1
NC 4
NC 5
RF_in
V_GS1
V_GS2
V_DS1
Quiescent Current
Temperature Compensation ⁽¹⁾
RF_out/V_DS2
RF_in
6
NC ⁷
V_GS1
8
V_GS2
9
V_DS1
10
GND 11
14
RF_out /
V_DS2
13 NC
12 _GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2006--2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC1940GNBR1
1