MW5IC2030MBR1_06 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Document Number: MW5IC2030M
Technical Data
Replaced by MW5IC2030NBR1(GNBR1). There are no form, fit or function changes with this Rev. 6, 1/2006
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
RF LDMOS Wideband Integrated
Power Amplifiers
MW5IC2030MBR1
The MW5IC2030 wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
MW5IC2030GMBR1
Final Application
• Typical CDMA Performance: V_DD = 27 Volts, I_DQ1 = 160 mA,
I_DQ2 = 230 mA, P_out = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Driver Application
• Typical CDMA Performance: V_DD = 27 Volts, I_DQ1 = 220 mA, I_DQ2 =
240 mA, P_out = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
• Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
P_out.
• On - Chip Matching (50 Ohm Input, >4 Ohm Output)
• Integrated Temperature Compensation Capability with Enable/Disable
Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application ⁽¹⁾
• Integrated ESD Protection
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V_DS1
V_RD2
V_RG2
RF_in
V_RD1
V_DS2/RF_out
GND
1
V_DS1
2
V_RD2
3
V_RG2
4
GND
5
RF_in
6
V_RD1
7
V_RG1/V_GS1
8
V_GS2
9
NC 10
GND ₁₁
16 GND
15 NC
14
V_DS2/
RF_out
13 NC
12 GND
V_RG1/V_GS1
V_GS2
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC2030MBR1 MW5IC2030GMBR1
1