MW4IC915NBR1_06 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage
structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
• Typical Performance: V_DD = 26 Volts, I_DQ1 = 60 mA, I_DQ2 = 240 mA,
P_out = 15 Watts CW, Full Frequency Band (860 - 960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: V_DD = 26 Volts, I_DQ1 = 60 mA,
I_DQ2 = 240 mA, P_out = 3 Watts Avg., Full Frequency Band (869 - 894 MHz
and 921 - 960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 65 dBc
Spectral Regrowth @ 600 kHz Offset = - 83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application⁽¹⁾
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V_RD2
V_RG2
V_DS1
RF_in
V_RD1
V_RG1
V_DS2/RF_out
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC915N
Rev. 7, 5/2006
MW4IC915NBR1
MW4IC915GNBR1
860 - 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC915NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC915GNBR1
GND
1
V_RD2
2
V_RG2
3
V_DS1
4
V_RD1
5
RF_in
6
V_RG1
7
V_GS1
8
V_GS2
9
NC 10
GND ₁₁
16 GND
15 NC
14
RF_out/
V_DS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1
1