MW4IC2020NBR1 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2020N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1600 to 2400 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two - Tone Performance: V_DD = 26 Volts, I_DQ1 = 80 mA, I_DQ2 =
200 mA, I_DQ3 = 300 mA, P_out = 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
• Typical GSM EDGE Performance: V_DD = 26 Volts, I_DQ1 = 80 mA, I_DQ2 =
230 mA, I_DQ3 = 230 mA, P_out = 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
• Typical CDMA Performance: V_DD = 26 Volts, I_DQ1 = 80 mA, I_DQ2 =
240 mA, I_DQ3 = 250 mA, P_out = 1 Watt Avg., Full Frequency Band, IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW P_out.
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application ⁽¹⁾
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW4IC2020N
Rev. 9, 5/2006
MW4IC2020NBR1
MW4IC2020GNBR1
1805- 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GNBR1
V_RD1
V_RG1
V_DS2
V_DS1
3 Stages I_C
GND 1
V_DS2
2
V_RD1
3
V_RG1
4
V_DS1
5
RF_in
6
16 GND
15
V_DS3/
14
RF_out
7
RF_in
V_DS3/RF_out
V_GS1
8
V_GS2
9
V_GS3 10
13
V_GS1
V_GS2
V_GS3
Quiescent Current
Temperature Compensation
GND 11
12
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1
1