MW4IC001MR4_06 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor
Technical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
• Typical CW Performance at 2170 MHz, 28 Volts, I_DQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
• High Gain, High Efficiency and High Linearity
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
Rev. 4, 5/2006
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
©_MF_Wre₄es_ICca₀le₀S₁e_Mm_Rico₄nductor, Inc., 2006. All rights reserved.
12
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
- 0.5, +65
- 0.5, +15
4.58
0.037
- 65 to +150
150
Value
27.3
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Rating
3
Package Peak Temperature
260
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
RF Device Data
Freescale Semiconductor