MRFG35030R5 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL base station applications with frequencies from 3400 to
3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
Class AB applications.
• Typical Single−Carrier W−CDMA Performance: V_DD = 12 Volts, I_DQ =
650 mA, P_out = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —12 dB
Drain Efficiency — 21%
ACPR @ 5 MHz Offset — −41 dBc @ 3.84 MHz Channel Bandwidth
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Excellent Thermal Stability
• In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFG35030R5
Rev. 2, 3/2005
MRFG35030R5
3550 MHz, 30 W, 12 V
SINGLE W−CDMA
POWER FET
GaAs PHEMT
CASE 1490−02, STYLE 1
Table 1. Maximum Ratings
Rating
Symbol
Drain−Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
P_D
Gate−Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature ⁽¹⁾
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic
V_GS
P_in
T_stg
T_ch
T_C
Symbol
Thermal Resistance, Junction to Case
R_θJC
1. For reliable operation, the operating channel temperature should not exceed 150°C.
Value
15
79
0.53
−5
37
− 40 to +175
175
− 20 to +90
Value
1.9
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35030R5
1