MRFG35020AR1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX and WLL base station applications that have a 200 MHz
BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and
CDMA amplifier applications. To be used in Class AB applications.
• Typical WiMAX Performance: V_DD = 12 Volts, I_DQ = 300 mA, P_out = 2 Watts
Avg., f = 3500 MHz, 802.16d, 64 QAM ³/₄, 4 bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Power Gain — 11.5 dB
Drain Efficiency — 22%
RCE — - 33 dB
Meets ETSI Type G Mask
• 20 Watts P1dB @ 3500 MHz, CW
Features
• Supports up to 28 MHz Bandwidth OFDM Signals
• Internally Input Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Excellent Thermal Stability
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Document Number: MRFG35020A
Rev. 0, 1/2008
MRFG35020AR1
3.5 GHz, 20 W, 12 V
WiMAX
POWER FET
GaAs PHEMT
CASE 360E - 01, STYLE 2
NI - 360 SHORT LEAD
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
V_DSS
15
Vdc
V_GS
-5
Vdc
RF Input Power
Storage Temperature Range
Channel Temperature ⁽¹⁾
Operating Case Temperature Range
P_in
34
dBm
T_stg
- 40 to +175
°C
T_ch
175
°C
T_C
- 40 to +90
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ⁽²⁾
Unit
Thermal Resistance, Junction to Case
R_θJC
2.7
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C. Exceeding 150°C channel operating temperature may
result in device performance degradation.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35020AR1
1