MRFG35010NT1 Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
MRFG35010NT1 replaced by MRFG35010ANT1.
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I_DQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 900 mW
Power Gain — 10 dB
Efficiency — 28%
• 9 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35010N
Rev. 7, 1/2008
MRFG35010NT1
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
P_D
15
22.7⁽²⁾
0.15⁽²⁾
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature⁽¹⁾
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
V_GS
P_in
T_stg
T_ch
T_C
Symbol
R_θJC
-5
33
- 65 to +150
175
- 20 to +85
Value
6.6⁽²⁾
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010NT1
1