MRFG35010AR1 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 12 Volts, I_DQ =
140 mA, P_out = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Document Number: MRFG35010A
Rev. 1, 6/2006
MRFG35010AR1
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D - 02, STYLE 1
NI - 360HF
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature ⁽¹⁾
Operating Case Temperature Range
V_DSS
V_GS
P_in
T_stg
T_ch
T_C
15
-5
33
- 65 to +175
175
- 40 to +90
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^{(1, 2)}
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Class AB
Class A
R_θJC
4.0
4.1
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
dBm
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010AR1
1