MRFG35003NT1 Datasheet, PDF (1/5 Pages) Freescale Semiconductor, Inc – RF Reference Design Library Gallium Arsenide PHEMT

Freescale Semiconductor
Technical Data
Available at http://www.freescale.com/rf, Go to Tools
Rev. 1, 6/2005
RF Reference Design Library
Gallium Arsenide PHEMT
RF Power Field Effect Transistors
Device Characteristics (From Device Data Sheet)
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I_DQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations
Reference Design Characteristics
• Typical Single - Channel W - CDMA Performance: - 45 dBc ACPR,
2.45 GHz, 12 Volts, I_DQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH
(8.5 dB P/A @ 0.01% Probability)
Output Power — 350 mWatt
Power Gain — 12.5 dB
Efficiency — 26%
MRFG35003NT1
MRFG35003MT1
BWA
BWA
2.4 - 2.5 GHz
V_GG
V_DD
RF
INPUT
MATC
H
RF
OUTPUT
MATC
H
MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN
Designed by: Monte Miller and Rick Hooper
This reference design is designed to demonstrate the typi-
cal RF performance characteristics of the
MRFG35003NT1(MT1) when applied for the 2.4 - 2.5 GHz
W - CDMA frequency band. The reference design is tuned for
the best tradeoff between good W - CDMA linearity and good
power capability and efficiency.
HEATSINKING
When operating this fixture please provide adequate heat-
sinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design
available for your use in development and testing of your
own product or products, without charge. The reference
design contains easy - to - copy, fully functional amplifier
designs. Where possible, it consists of “no tune” distrib-
uted element matching circuits designed to be as small as
possible, includes temperature compensated bias circuit-
ry, and is designed to be used as “building blocks” for our
customers.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
 Freescale Semiconductor, Inc., 2005. All rights reserved.
_RM_Fot_Ror_eol_fa_e,_rI_enc_n._c2_e00_D3 _{esign Data}
Freescale Semiconductor
MRFG35003NT1 MRFG35003MT1 BWA
1