MRFG35003M6T1_06 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Document Number: MRFG35003M6T1
Rev. 4, 1/2006
Replaced by MRFG35003N6T1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
I_DQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003M6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
P_D
8
22.7 ⁽²⁾
0.15 ⁽²⁾
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature ⁽¹⁾
Operating Case Temperature Range
Table 2. Thermal Characteristics
V_GS
-5
P_in
24
T_stg
- 65 to +150
T_ch
175
T_C
- 20 to +85
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Symbol
R_θJC
Value
6.6 ⁽²⁾
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35003M6T1
1