MRFG35003ANT1 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 12 Volts, I_DQ =
55 mA, P_out = 300 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10.8 dB
Drain Efficiency — 24.5%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
• 3 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35003AN
Rev. 2, 6/2009
MRFG35003ANT1
3.5 GHz, 3 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature ⁽¹⁾
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
P_in
T_stg
T_ch
Symbol
15
-5
29
- 65 to +150
175
Value ⁽²⁾
Thermal Resistance, Junction to Case
R_θJC
15.9
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
dBm
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35003ANT1
1