MRFG35002N6T1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 6 Volts, I_DQ =
65 mA, P_out = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
• 1.5 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35002N6
Rev. 1, 5/2006
MRFG35002N6T1
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature ⁽¹⁾
Operating Case Temperature Range
Table 2. Thermal Characteristics
V_DSS
V_GS
P_in
T_stg
T_ch
T_C
8
-5
22
- 65 to +150
175
- 20 to +85
Characteristic
Symbol
Value ⁽²⁾
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
R_θJC
15.2
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35002N6T1
1