MRFE6VS25N Datasheet, PDF (1/24 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistor

Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
RF power transistor designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness
platform and is suitable for use in applications where high VSWRs are
encountered.
Typical Performance: V_DD = 50 Volts
Frequency
P_out
(MHz)
Signal Type
(W)
G_ps
(dB)
η_D
IMD
(%)
(dBc)
1.8 to 30 ⁽¹⁾
Two--Tone
25 PEP
25
(10 kHz spacing)
51
--30
512
Pulse (100 μsec,
25 Peak
25.4
74.5
—
20% Duty Cycle)
512
CW
25
25.5
74.7
—
1030
CW
25
22.5
60
—
1. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
P_out
(W)
Test
Voltage
Result
30
CW
>65:1
31
50
No Device
at all Phase
(3 dB
Degradation
Angles
Overdrive)
512
Pulse
(100 μsec, 20%
Duty Cycle)
31 Peak
(3 dB
Overdrive)
512
CW
30.5
(3 dB
Overdrive
1030
CW
31
(3 dB
Overdrive
Features
• Wide Operating Frequency Range
• Extremely Rugged
• Unmatched, Capable of Very Broadband Operation
• Integrated Stability Enhancements
• Low Thermal Resistance
• Extended ESD Protection Circuit
• In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Document Number: MRFE6VS25N
Rev. 0, 6/2012
MRFE6VS25NR1
1.8--2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
TO--270--2
PLASTIC
Gate 1
2 Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VS25NR1
1