MRFE6VP6300HR3 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1.8 and 600 MHz. These devices are suitable for use in high VSWR
industrial, broadcast and aerospace applications.
• Typical Performance: V_DD = 50 Volts, I_DQ = 100 mA
Signal Type
P_out
(W)
f
G_ps
η_D
IRL
(MHz)
(dB)
(%)
(dB)
Pulsed (100 μsec, 300 Peak
230
20% Duty Cycle)
26.5
74.0
--16
CW
300 Avg.
130
25.0
80.0
--15
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
• 300 Watts CW Output Power
• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
• Capable of 300 Watts CW Operation
Features
• Device can be used Single--Ended or in a Push--Pull Configuration
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
Document Number: MRFE6VP6300H
Rev. 0, 10/2010
MRFE6VP6300HR3
MRFE6VP6300HSR3
1.8--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRFE6VP6300HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRFE6VP6300HSR3
RF_in/V_GS 3
1 RF_out/V_DS
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
Value
Unit
--0.5, +125 Vdc
--6.0, +10 Vdc
--65 to +150 °C
150
°C
225
°C
RF_out/V_GS 4
2 RF_out/V_DS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Thermal Resistance, Junction to Case
Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle,
50 Vdc, I_DQ = 100 mA, 230 MHz
Case Temperature 87°C, 300 W CW, 50 Vdc, I_DQ = 1100 mA, 230 MHz
Z_θJC
R_θJC
0.05
0.19
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
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