MRFE6VP100H Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
RF power transistors designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. These devices are fabricated using Freescale’s enhanced
ruggedness platform and are suitable for use in applications where high VSWRs
are encountered.
Typical Performance: V_DD = 50 Volts
Frequency
(MHz)
Signal Type
P_out
(W)
G_ps
(dB)
η_D
IMD
(%)
(dBc)
30--512 ^(1,3)
Two--Tone
100 PEP
19.0
30.0
--30
(100 kHz spacing)
512 ⁽²⁾
CW
100
27.2
70.0
—
512 ⁽²⁾ Pulse (200 μsec, 20% 100 Peak
26.0
70.0
—
Duty Cycle)
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
P_out
Test
(W)
Voltage
Result
512 ⁽²⁾
Pulse
>65:1
130
50
No Device
(100 μsec, 20% at all Phase (3 dB
Degradation
Duty Cycle)
Angles Overdrive)
512 ⁽²⁾
CW
126
(3 dB
Overdrive)
1. Measured in 30--512 MHz broadband reference circuit.
2. Measured in 512 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
• Wide Operating Frequency Range
• Extremely Rugged
• Unmatched, Capable of Very Broadband Operation
• Integrated Stability Enhancements
• Low Thermal Resistance
• Integrated ESD Protection Circuitry
• In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Document Number: MRFE6VP100H
Rev. 0, 5/2012
MRFE6VP100HR5
MRFE6VP100HSR5
1.8--2000 MHz, 100 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
NI--780--4
MRFE6VP100HR5
NI--780S--4
MRFE6VP100HSR5
Gate A
Drain A
Gate B
Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
V_DSS
--0.5, +133
Vdc
Gate--Source Voltage
V_GS
--6.0, +10
Vdc
Storage Temperature Range
T_stg
--65 to +150
°C
Case Operating Temperature
T_C
--40 to +150
°C
Operating Junction Temperature ^(4,5)
T_J
--40 to +225
°C
4. Continuous use at maximum temperature will affect MTTF.
5. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP100HR5 MRFE6VP100HSR5
1