MRFE6S9125NR1 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9125N
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these de-
vices make them ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V_DD = 28 Volts,
I_DQ = 950 mA, P_out = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 700 mA,
P_out = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 700 mA, P_out =
125 Watts, Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRFE6S9125NR1
MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
Symbol
- 0.5, +66
- 0.5, +12
32, +0
- 65 to +150
150
225
Value ^(2,3)
Vdc
Vdc
Vdc
°C
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
R_θJC
0.44
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
1