MRFE6S9060NR1 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V_DD = 28 Volts,
I_DQ = 450 mA, P_out = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.1 dB
Drain Efficiency — 33%
ACPR @ 750 kHz Offset — - 45.7 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 500 mA,
P_out = 21 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 500 mA, P_out = 60 Watts,
Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRFE6S9060N
Rev. 1, 10/2007
MRFE6S9060NR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
Symbol
- 0.5, +66
- 0.5, + 12
32, +0
- 65 to +150
150
225
Value ^(2,3)
Vdc
Vdc
Vdc
°C
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 78°C, 14 W CW
R_θJC
0.77
0.88
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
1