MRFE6S8046NR1 Datasheet, PDF (1/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Document Number: MRFE6S8046N
Rev. 0, 5/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier
applications.
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 300 mA, P_out =
35.5 Watts CW
Frequency
G_ps
h_D
(dB)
(%)
864 MHz
880 MHz
894 MHz
19.9
58.7
20
58.5
19.8
57.7
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated P_out), Designed for Enhanced
Ruggedness
• Typical P_out @ 1 dB Compression Point ] 47 Watts CW
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 285 mA,
P_out = 17.8 Watts Avg.
Frequency
G_ps
(dB)
Spectral
Spectral
Regrowth @ Regrowth @
h_D
400 kHz
(%)
(dBc)
600 kHz
(dBc)
EVM
(% rms)
864 MHz
19.8
43.8
61.2
70.9
2.1
880 MHz
19.9
43.6
63.4
72.5
2
894 MHz
19.8
43.1
63.7
73
2
MRFE6S8046NR1
MRFE6S8046GNR1
864 - 894 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S8046NR1
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S8046GNR1
PARTS ARE SINGLE - ENDED
Features
• Class F Output Matched for Higher Impedances and Greater Efficiency
• Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
RF_in/V_GS 3
RF_in/V_GS 4
2 RFout/VDS
1 RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
V_DSS
- 0.5, +66
Vdc
Gate- Source Voltage
V_GS
- 6.0, +10
Vdc
Operating Voltage
V_DD
32, +0
Vdc
Storage Temperature Range
T_stg
- 65 to +150
°C
Case Operating Temperature
T_C
150
°C
Operating Junction Temperature ^(1,2)
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
1