MRF9582NT1 Datasheet, PDF (1/8 Pages) Freescale Semiconductor, Inc – Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET

Freescale Semiconductor
Technical Data
Silicon Lateral FET, N - Channel
Enhancement - Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as
portable analog and digital cellular radios and PC RF modems.
• Typical CW RF Performance @ 849 MHz: V_DD = 12.5 Volts, I_DQ = 300 mA,
P_out = 38 dBm
Power Gain — 10.5 dB
Drain Efficiency — 55%
• Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
Document Number: MRF9582NT1
Rev. 1, 7/2006
MRF9582NT1
849 MHz, 38 dBm, 12.5 V
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
3
2
1
4
CASE 449 - 02, STYLE 1
PLD - 1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Drain - Gate Voltage (R_GS = 1.0 MΩ)
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T_C = 85°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction - to - Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Symbol
V_DSS
V_DGO
V_GS
I_D
P_D
T_stg
T_J
Value
Unit
17
Vdc
17
Vdc
4.0
Vdc
1.5
Adc
10.5
W
- 65 to 150
°C
150
°C
Symbol
R_θJC
Value
6
Rating
1
Package Peak Temperature
260
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9582NT1
1