MRF9200LR3_06 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applica-
tions in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: V_DD = 26 Volts,
I_DQ = 2400 mA, P_out = 40 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 25%
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF9200L
Rev. 3, 5/2006
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF9200LR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF9200LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, +65
- 0.5, +15
625
3.6
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
T_stg
T_C
T_J
Symbol
- 65 to +150
150
200
Value ^(1,2)
Thermal Resistance, Junction to Case
Case Temperature 60°C, 200 W CW
Case Temperature 80°C, 40 W CW
R_θJC
0.28
0.34
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9200LR3 MRF9200LSR3
1