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MRF9200LR3.pdf Datasheet, PDF (1/12 Pages) – | |||
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
NâChannel EnhancementâMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for largeâsignal, commonâsource amplifier applica-
tions in 26 volt base station equipment.
⢠Typical SingleâCarrier NâCDMA Performance @ 880 MHz: VDD = 26 Volts,
IDQ = 2400 mA, Pout = 40 Watts Avg., ISâ95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/
Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain â 17.5 dB
Drain Efficiency â 25%
ACPR @ 750 kHz Offset â â46.5 dBc @ 30 kHz Bandwidth
⢠Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts NâCDMA
Output Power
⢠Characterized with Series Equivalent LargeâSignal Impedance Parameters
⢠Internally Matched, Controlled Q, for Ease of Use
⢠Integrated ESD Protection
⢠Low Gold Plating Thickness on Leads, 40µⳠNominal.
⢠In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9200L
Rev. 1, 12/2004
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE NâCDMA
LATERAL NâCHANNEL
RF POWER MOSFETs
CASE 465Bâ03, STYLE 1
NIâ880
MRF9200LR3
Table 1. Maximum Ratings
CASE 465Câ02, STYLE 1
NIâ880S
MRF9200LSR3
Rating
Symbol
Value
Unit
DrainâSource Voltage
GateâSource Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
â0.5, +65
â0.5, +15
625
3.6
Vdc
Vdc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Case Temperature 60°C
Case Temperature 80°C
Tstg
â65 to +150
°C
TJ
200
°C
CW
W
200
160
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 60°C, 200 W CW
Case Temperature 80°C, 40 W CW
Symbol
RθJC
Value (1,2)
0.28
0.34
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes â AN1955.
NOTE â CAUTION â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
5â1
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