MRF9200LR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applica-
tions in 26 volt base station equipment.
• Typical Single−Carrier N−CDMA Performance @ 880 MHz: V_DD = 26 Volts,
I_DQ = 2400 mA, P_out = 40 Watts Avg., IS−95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/
Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 25%
ACPR @ 750 kHz Offset — −46.5 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts N−CDMA
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9200L
Rev. 1, 12/2004
MRF9200LR3
MRF9200LSR3
880 MHz, 40 W AVG., 26 V
SINGLE N−CDMA
LATERAL N−CHANNEL
RF POWER MOSFETs
CASE 465B−03, STYLE 1
NI−880
MRF9200LR3
Table 1. Maximum Ratings
CASE 465C−02, STYLE 1
NI−880S
MRF9200LSR3
Rating
Symbol
Value
Unit
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
−0.5, +65
−0.5, +15
625
3.6
Vdc
Vdc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Case Temperature 60°C
Case Temperature 80°C
T_stg
−65 to +150
°C
T_J
200
°C
CW
W
200
160
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 60°C, 200 W CW
Case Temperature 80°C, 40 W CW
Symbol
R_θJC
Value ^(1,2)
0.28
0.34
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1955.
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRF9200LR3 MRF9200LSR3
5−1