MRF9045LR1 Datasheet, PDF (1/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applica-
tions in 28 volt base station equipment.
• Typical Two−Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — −32 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MRF9045
Rev. 9, 12/2004
MRF9045LR1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL N−CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B−05, STYLE 1
NI−360
MRF9045LR1
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
MRF9045LR1
MRF9045LSR1
MRF9045LR1
MRF9045LSR1
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
CASE 360C−05, STYLE 1
NI−360S
MRF9045LSR1
Value
−0.5, +65
−0.5, + 15
125
0.71
175
1
−65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Symbol
R_θJC
Value
1.4
1.0
Unit
°C/W
Class
1 (Minimum)
M1 (Minimum)
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9045LR1 MRF9045LSR1
5−1