MRF9030MR1_07 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data ^{Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part}
replacement. N suffix added to part number to indicate transition to lead - free terminations.
RF Power Field Effect Transistors
MRF9030M
Rev. 9, 5/2006
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
MRF9030MR1
MRF9030MBR1
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• 200_C Capable Plastic Package
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF9030MR1
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF9030MBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, +65
- 0.5, + 15
139
0.93
Vdc
Vdc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
T_stg
- 65 to +150
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R_θJC
1.08
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9030MR1 MRF9030MBR1
1