MRF9030MR1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF9030M/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
MRF9030MR1
N-Channel Enhancement-Mode Lateral MOSFETs ^MRF9030MBR1
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common-source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MRF9030MR1
MRF9030MBR1
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22-A113
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
+ 15, - 0.5
139
0.93
- 65 to +150
175
Max
1.08
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
Rating
3
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
 M^Mo^Otor^To^Ola,^RIn^Oc.^L2^A00^R3 ^{F DEVICE DATA} _{For More Information On This Product,}
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MRF9030MR1 MRF9030MBR1
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