MRF8S9202N_12 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
 _BITDya_Qpni=dcwa1li7dS0tihn0g=mle3A--.,8CP4a_orM_uri_{tHe=rzW,7I5n--pWCuDattMStsiAgAnPvaeglr.P,foAIQrRmMa=na7cg.en5:itdVuBdDeD@C=0l2ip.80p1iVn%ogl,tPsCr,ohbaanbnielitly}
on CCDF.
Frequency
G_ps
(dB)
_D
Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
18.8
36.0
6.3
--39.5
940 MHz
18.7
37.0
6.2
--38.6
960 MHz
18.6
38.5
5.9
--37.1
 Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW ⁽¹⁾
Output Power (3 dB Input
Enhanced Ruggedness
Overdrive
from
Rated
P_out),
Designed
for
 Typical P_out @ 1 dB Compression Point ≃ 260 Watts CW
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C Operation
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8S9260H
Rev. 1, 2/2012
MRF8S9260HR3
MRF8S9260HSR3
920--960 MHz, 75 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF8S9260HR3
CASE 465C--03
NI--880S
MRF8S9260HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25C
Derate above 25C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
280
1.5
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 75 W CW, 28 Vdc, I_DQ = 1800 mA
Case Temperature 80C, 265 W CW, 28 Vdc, I_DQ = 1100 mA
R_JC
0.37
0.31
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2009, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
1