MRF8S9200NR3_10 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
Document Number: MRF8S9200N
Rev. 1, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
1400 mA, P_out = 58 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
19.9
37.7
19.9
37.1
19.5
36.8
6.1
--36.2
6.1
--36.6
6.0
--36.0
MRF8S9200NR3
920--960 MHz, 58 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 300 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
• Typical P_out @ 1 dB Compression Point ≃ 200 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +70
Vdc
V_GS
--6.0, +10
Vdc
V_DD
32, +0
Vdc
T_stg
--65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 58 W CW, 28 Vdc, I_DQ = 1400 mA
Case Temperature 80°C, 200 W CW, 28 Vdc, I_DQ = 1400 mA
R_θJC
0.30
0.25
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9200NR3
1