MRF8S9170NR3 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ =
1000 mA, P_out = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
h_D
Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
19.3
36.5
6.0
- 36.6
19.1
36.1
6.1
- 36.7
18.9
36.0
6.0
- 36.1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 1 dB Compression Point ] 177 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Document Number: MRF8S9170N
Rev. 0, 9/2009
MRF8S9170NR3
920 - 960 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 2021 - 02, STYLE 1
OM - 780 - 2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
V_DSS
- 0.5, +70
Vdc
V_GS
- 6.0, +10
Vdc
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DD
32, +0
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 78°C, 50 W CW, 28 Vdc, I_DQ = 1000 mA
Case Temperature 82°C, 170 W CW, 28 Vdc, I_DQ = 1000 mA
R_θJC
0.38
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9170NR3
1