MRF8S7235N Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to
768 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
1400 mA, P_out = 63 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
(MHz)
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
728
20.0
36.1
6.3
--38.1
748
20.2
36.0
6.4
--39.0
768
20.1
35.9
6.4
--38.7
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output
Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
• Typical P_out @ 1 dB Compression Point ≃ 260 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Document Number: MRF8S7235N
Rev. 0, 6/2012
MRF8S7235NR3
728--768 MHz, 63 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
OM--780--2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +70
Vdc
V_GS
--6.0, +10
Vdc
V_DD
32, +0
Vdc
T_stg
--65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristich
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 63 W CW, 28 Vdc, I_DQ = 1400 mA, 728 MHz
Case Temperature 82°C, 250 W CW, 28 Vdc, I_DQ = 1400 mA, 728 MHz
R_θJC
0.33
0.29
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7235NR3
1