MRF8S7170NR3 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
Document Number: MRF8S7170N
Rev. 0, 2/2010
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
• Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ =
1200 mA, P_out = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
h_D
Output PAR ACPR
(%)
(dB)
(dBc)
728 MHz
748 MHz
768 MHz
19.7
37.1
19.5
37.0
19.4
37.9
6.2
-38.7
6.1
-37.5
6.1
-37.8
MRF8S7170NR3
728-768 MHz, 50 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
• Typical P_out @ 1 dB Compression Point ] 182 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2021-03, STYLE 1
OM-780-2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
-0.5, +70
Vdc
V_GS
-6.0, +10
Vdc
V_DD
32, +0
Vdc
T_stg
-65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW, 28 Vdc, I_DQ = 1200 mA
Case Temperature 81°C, 50 W CW, 28 Vdc, I_DQ = 1200 mA
R_θJC
0.30
0.37
°C/W
Ăă1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S7170NR3
1