MRF8S23120H Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF8S23120H
Rev. 0, 11/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for LTE base station applications with frequencies from 2300 to
2400 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
800 mA, P_out = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
2300 MHz
16.0
31.9
6.1
--37.1
2350 MHz
16.3
30.9
6.4
--37.9
2400 MHz
16.6
31.2
6.3
--37.5
• Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW ⁽¹⁾
Output Power (2 dB Input Overdrive from Rated P_out)
• Typical P_out @ 1 dB Compression Point ≃ 107 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
MRF8S23120HR3
MRF8S23120HSR3
2300--2400 MHz, 28 W AVG., 28 V
LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF8S23120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S23120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
109
0.52
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 28 W CW, 28 Vdc, I_DQ = 800 mA, 2400 MHz
Case Temperature 80°C, 120 W CW⁽¹⁾, 28 Vdc, I_DQ = 800 mA, 2400 MHz
R_θJC
0.50
0.47
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
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