MRF8S21200HR6_10 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
1400 mA, P_out = 48 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
2110 MHz
2140 MHz
2170 MHz
17.8
32.6
18.1
32.6
18.1
32.9
6.4
--37.7
6.3
--37.1
6.2
--36.2
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out)
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF8S21200H
Rev. 2, 10/2010
MRF8S21200HR6
MRF8S21200HSR6
2110--2170 MHz, 48 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF8S21200HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8S21200HSR6
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
CW Operation @ T_A = 25°C
Derate above 25°C
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
200
1.6
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
RF_in/V_GS 3
1 RF_out/V_DS
RF_in/V_GS 4
2 RF_out/V_DS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 48 W CW, 28 Vdc, I_DQ = 1400 mA
Case Temperature 81°C, 200 W CW, 28 Vdc, I_DQ = 1400 mA
R_θJC
0.31
0.27
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21200HR6 MRF8S21200HSR6
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