MRF8S21172HR3 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – MRF8S21172HR3

Freescale Semiconductor
Technical Data
Document Number: MRF8S21172H
Rev. 0, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
1350 mA, P_out = 42 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
2110 MHz
2140 MHz
2170 MHz
17.3
32.6
5.9
--35.8
17.4
32.0
6.0
--35.9
17.5
31.6
5.9
--35.0
MRF8S21172HR3
MRF8S21172HSR3
2110--2170 MHz, 42 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 193 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 1 dB Compression Point ≃ 132 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
CASE 465--06, STYLE 1
NI--780
MRF8S21172HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S21172HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
196
0.98
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 71°C, 42 W CW, 28 Vdc, I_DQ = 1350 mA, 2170 MHz
Case Temperature 84°C, 160 W CW⁽⁴⁾, 28 Vdc, I_DQ = 1350 mA, 2170 MHz
R_θJC
0.41
0.41
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21172HR3 MRF8S21172HSR3
1