MRF8S19260H Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF8S19260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 30 Volts, I_DQ =
1600 mA, P_out = 74 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
MRF8S19260HR6
MRF8S19260HSR6
1930--1990 MHz, 74 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
1930 MHz
17.6
33.2
5.9
--36.0
1960 MHz
18.0
33.6
5.8
--35.7
1990 MHz
18.2
34.5
5.7
--34.6
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW ⁽¹⁾
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 1 dB Compression Point ≃ 245 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375I--04
NI--1230--8
MRF8S19260HR6
CASE 375J--03
NI--1230S--8
MRF8S19260HSR6
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
N.C. 1
8 VBW_A
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
291
1.48
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
RF_inA/V_GSA 2
7 RF_outA/V_DSA
RF_inB/V_GSB 3
6 RF_outB/V_DSB
N.C. ⁴
(Top View)
5 VBW_B
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 74 W CW, 30 Vdc, I_DQ = 1600 mA, 1990 MHz
Case Temperature 91°C, 260 W CW⁽¹⁾, 30 Vdc, I_DQ = 1600 mA, 1990 MHz
R_θJC
0.30
0.28
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S19260HR6 MRF8S19260HSR6
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