MRF8S18210WHS Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 30 Volts, I_DQ =
1300 mA, P_out = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
1930 MHz
1960 MHz
1995 MHz
17.8
29.2
17.8
28.2
18.1
27.6
7.0
--34.2
7.0
--34.4
7.1
--34.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW ⁽¹⁾
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 1 dB Compression Point ≃ 210 Watts CW
1800 MHz
• Typical Single--Carrier W--CDMA Performance: V_DD = 30 Volts, I_DQ =
1300 mA, P_out = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
1805 MHz
1840 MHz
1880 MHz
18.2
30.1
18.1
29.1
18.2
27.8
7.3
--35.1
7.4
--35.4
7.4
--35.9
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
MRF8S18210WHSR3
MRF8S18210WGHSR3
1805 MHz -- 1995 MHz
50 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
NI--880XS--2
MRF8S18210WHSR3
NI--880XS--2 GULL
MRF8S18210WGHSR3
RF_in/V_GS 2
1 RF_out/V_DS
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25°C
Derate above 25°C
Rating
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
239
1.44
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
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