MRF8P29300HR6 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 2700 and 2900 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: V_DD = 30 Volts, I_DQ = 100 mA
Signal Type
P_out
(W)
f
G_ps
η_D
IRL
(MHz)
(dB)
(%)
(dB)
Pulsed (100 μsec,
10% Duty Cycle)
320 Peak
2900
13.3
50.5
--17
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak
Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated P_out)
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
Document Number: MRF8P29300H
Rev. 0, 2/2011
MRF8P29300HR6
MRF8P29300HSR6
2700--2900 MHz, 320 W, 30 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF8P29300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P29300HSR6
PARTS ARE PUSH--PULL
Table 1. Maximum Ratings
RF_inA/V_GSA 3
1 RF_outA/V_DSA
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +65
Vdc
RF_inB/V_GSB 4
2 RF_outB/V_DSB
V_GS
--6.0, +10
Vdc
T_stg
-- 65 to +150
°C
T_C
150
°C
T_J
225
°C
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol Value ^(2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 61°C, 320 W Pulsed, 300 μsec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz
Case Temperature 69°C, 320 W Pulsed, 500 μsec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz
Z_θJC
°C/W
0.06
0.10
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P29300HR6 MRF8P29300HSR6
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