MML20211HT1 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – Enhancement Mode pHEMT Technology (E--pHEMT)

Freescale Semiconductor
Technical Data
Document Number: MML20211H
Rev. 1, 9/2014
Enhancement Mode pHEMT
Technology (E--pHEMT)
Low Noise Amplifier
The MML20211H is a single--stage low noise amplifier (LNA) with active bias
and high isolation for use in cellular infrastructure applications. It is designed for
a range of low noise, high linearity applications such as pico cell, femto cell,
tower mounted amplifiers (TMA) and receiver front end circuits. It operates from
a single voltage supply and is suitable for applications with frequencies from
1400 to 2800 MHz such as TD--SCDMA, W--CDMA, UMTS, PCS, LTE and BWA.
Features
 Ultra Low Noise Figure: 0.65 dB @ 2140 MHz
 Frequency: 1400--2800 MHz
 High Reverse Isolation: --35 dB @ 2140 MHz
 P1dB: 21.3 dBm @ 2140 MHz
 Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)
 Third Order Output Intercept Point: 33 dBm @ 2140 MHz
 Active Bias Control (adjustable externally)
 Single 5 V Supply
 Supply Current: 60 mA
 50 Ohm Operation (some external matching required)
 Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
MML20211HT1
1400--2800 MHz, 18.6 dB
21.3 dBm
E--pHEMT LNA
DFN 2  2
Table 1. Typical Performance ⁽¹⁾
Table 2. Maximum Ratings
Characteristic
Noise Figure ⁽²⁾
Input Return
Loss (S11)
Output Return
Loss (S22)
Small--Signal
Gain (S21)
1400 1800 2140 2700
Symbol MHz MHz MHz MHz Unit
NF 0.65 0.65 0.65 0.85 dB
IRL --19.5 --16 --16.7 --17.3 dB
ORL --24.9 --28 --26.6 --20 dB
G_p
21.3 19.7 18.6 18.1 dB
Rating
Symbol Value Unit
Supply Voltage
V_DD
6
V
Supply Current
I_DD
200
mA
RF Input Power
P_in
22
dBm
Storage Temperature Range T_stg --65 to +150 C
Junction Temperature
T_J
175
C
Power Output
@ 1dB
Compression
P1dB 21.1 21.1 21.3 19.6 dBm
Third Order
IIP3 10.8 12.5 14.4 14.9 dBm
Input Intercept
Point
Third Order
OIP3 32.1 32.2 33
Output
Intercept Point
33 dBm
1. V_DD = 5 Vdc, T_A = 25C, 50 ohm system, application circuit
tuned for specified frequency.
2. Noise figure value calculated with connector losses removed.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value ⁽³⁾
Unit
Thermal Resistance, Junction to Case
Case Temperature 87C, 5 Vdc, I_DD = 60 mA, no RF applied
R_JC
43.4
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
C/W
 Freescale Semiconductor, Inc., 2011, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor
MML20211HT1
1