MMH3111NT1 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – Heterostructure Field Effect Transistor

Freescale Semiconductor
Technical Data
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
The MMH3111NT1 is a General Purpose Amplifier that is internally
input and output prematched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as Cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
Features
• Frequency: 250 to 4000 MHz
• P1dB: 22.5 dBm @ 900 MHz
• Small - Signal Gain: 12 dB @ 900 MHz
• Third Order Output Intercept Point: 44 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• Internally Biased
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Document Number: MMH3111NT1
Rev. 0, 11/2007
MMH3111NT1
250 - 4000 MHz, 12 dB
22.5 dBm
GaAs HFET
12 ₃
CASE 1514 - 02, STYLE 2
SOT - 89
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz MHz
Small - Signal Gain
(S21)
G_p
12 11.3 10 dB
Input Return Loss
(S11)
IRL
- 14 - 15 - 16 dB
Output Return Loss
(S22)
ORL - 14 - 19 - 14 dB
Power Output @1dB P1db 22.5 22
Compression
22 dBm
Third Order Output
Intercept Point
IP3
44
44
1. V_DD = 5 Vdc, T_C = 25°C, 50 ohm system
42 dBm
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage ⁽²⁾
V_DD
6
V
Supply Current ⁽²⁾
I_DD
300
mA
RF Input Power
P_in
10
dBm
Storage Temperature Range
T_stg - 65 to +150 °C
Junction Temperature ⁽³⁾
T_J
150
°C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V_DD = 5 Vdc, I_DD = 150 mA, T_C = 25°C)
Characteristic
Symbol
Value ⁽⁴⁾
Thermal Resistance, Junction to Case
R_θJC
37.5
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MMH3111NT1
1